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| www..com PJ2N3906 PNP Epitaxial Silicon Transistor GENERAL PURPO SE TRANSISTO R * * Collector-Emitter Voltage: VCEO = 40V Collector Dissipation: P C (max) = 625 mW . TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj T stg Value 40 40 5 200 625 150 -55~150 Unit V V V mA mW Device PJ2N3906CT PJ2N3906CX Operating Temperature -20+85 Package TO-92 SOT-23 P in : 1. Emitter 2. Base 3. Collector P in : 1. Base 2. Emitter 3. Collector ORDERING INFORMATION ELECTRICAL CHARACTERISTICS (T a = 25) Characte ristic Collector-Base Breakdown Voltage *Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Curent Base Cut-off Current *DC Current Gain Symbol BVCBO BVCEO BVEBO ICEX IBL hFE Te st Conditions IC= 10A , IE =0 IC= 1mA , IB=0 IE =10A , IC=0 VCE = 30V , VBE = 3V VCE = 30V , VBE = 3V Ic =0.1mA, VCE =1V Ic =1mA, VCE =1V Ic=10mA; VCE =1V Ic =50 mA, VCE =1V Ic =100 mA, VCE =1V IC= 10 mA , IB=1mA IC= 50mA , IB=5mA IC= 10 mA , IB=1mA IC= 50mA , IB=5mA VCB =5V, IE =0 f=1MHz Ic =10 mA, VCE =20V f=100MHz Vcc =3 V, VBE =0.5V Ic =10 mA, IB1 =1mA Vcc =3V, Ic =1mA IB1=IB2=1 mA Min 40 40 6 Typ Max Uni t V V V nA nA 50 50 60 80 100 60 30 0.65 300 0.25 0.4 0.85 0.95 4.5 *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Produce Turn On Time Turn Off Time VCE(sat) VBE(sat) C ob fT ton toff V V V V pF MHz 250 70 250 ns ns *Pulse Test: Pulse Width 300s.Duty Cycle 2% 1-3 2002/01.rev.A PJ2N3906 PNP Epitaxial Silicon Transistor DC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE OUTPUT CAPACITANCE 2-3 2002/01.rev.A PJ2N3906 PNP Epitaxial Silicon Transistor 3-3 2002/01.rev.A |
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